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Compared with bipolar transistors, field effect transistors have the following characteristics.
(1) The field effect tube is a voltage control device, which controls ID (drain current) through VGS (gate-source voltage);
(2) The control input terminal current of the field effect tube is extremely small, so its input resistance (107~1012Ω) is very large.
(3) It uses majority carriers to conduct electricity, so its temperature stability is better;
(4) The voltage amplification factor of the amplifying circuit composed of it is smaller than the voltage amplification factor of the amplifying circuit composed of a triode;
(5) The field effect tube has strong anti-radiation ability;
(6) Because there is no shot noise caused by the diffusion of messy moving electrons, it has low noise.
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